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Trench Gate
Power MOSFET
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
V DSS =
I D25 =
R DS(on) ≤
250V
50A
60m Ω
N-Channel Enhancement Mode
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G
S
D (Tab)
G
DS
D (Tab)
G
D
S
D (Tab)
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
250
250
V
V
V GSM
I D25
I DM
I A
E AS
P D
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
± 30
50
130
5
1.5
400
V
A
A
A
J
W
G
D
S
G = Gate
S = Source
D (Tab)
D = Drain
Tab = Drain
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
Features
Avalanche Rated
T L
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 s
300
260
° C
° C
High Current Handling Capability
Fast Intrinsic Rectifier
M d
F C
Mounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10
Mounting Force (TO-263) 10..65 / 2.2..14.6
Nmlb.in.
N/lb.
Low R DS(on)
Weight
TO-263
TO-220
TO-3P
TO-247
2.5
3.0
5.5
6.0
g
g
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ . Max.
250
V
Applications
DC-DC Coverters
Battery Chargers
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 1mA
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
3.0
5.0 V
± 100 nA
1 μ A
150 μ A
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC and DC Motor Drives
Uninterrupted Power Supplies
High Speed Power Switching
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
60 m Ω
Applications
? 2010 IXYS CORPORATION, All Rights Reserved
DS99346B(01/10)
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